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APPLICATION NOTE
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
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Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
CONTENTS 1 2 3 4 5 6 7 8 ABSTRACT INTRODUCTION DESIGN OF THE AMPLIFIER ADJUSTMENTS OF THE AMPLIFIER ASSEMBLING OF THE AMPLIFIER AND MECHANICAL DATA MEASURED RESULTS CONCLUSION REFERENCES
Application Note ECO8005
1998 Mar 23
2
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
1 ABSTRACT
Application Note ECO8005
For application in driver or final stages of TV-transposers in Band III (174-230 MHz) a linear wideband power amplifier has been designed with 2 transistors BLV33F, coupled by means of 3 dB - 90 hybrids. Each transistor is adjusted in Class-A at VCE = 25 V and IC = 3.25 A. A demonstration model showed a peak sync. output power of 40 W at a 3-tone I.M. distortion between -52 and -53 dB. At this power level the cross-modulation varied from 15 to 18%. The power gain is between 13.3 and 13.6 dB. For natural convection cooling the heatsink temperature is 40 C above ambient temperature. 2 INTRODUCTION
For application in T.V. transposers and transmitters for Band III a wideband linear power amplifier has been designed with 2 transistors BLV33F, coupled by means of 3 dB -90 hybrids. Each transistor is adjusted in Class-A at VCE = 25 V and IC = 3.25 A. Note: The BLV33F is a high gain, internally matched, 1/2 inch 6 leads flange version of the BLV33. 3 DESIGN OF THE AMPLIFIER
For class-A operation the BLV33F is specified at VCE = 25 V, IC = 3.25 A. The corresponding typical gain, input and load impedance are given in Table 1: Table 1 FREQ. (MHz) 174 202 230 GAIN (dB) 12.94 12.88 13.91 INPUT IMPEDANCE () 0.85 + j0.59 1.02 + j0.47 0.93 + j0.02 LOAD IMPEDANCE () 2.68 + j1.24 2.23 + j0.90 1.84 + j0.51
To obtain a high linear output and at the same time good input and output matching (V.S.W.R. 1.2) 3 dB -90 hybrids are used. The reflected input power will be absorbed in the 50 resistor, matching the isolated port (see Fig.1). For detailed information on computer-aided design (carried out by Mr. Hilbers Central Application Laboratory) see Refs 1, 2 and 3. The transistors used in this particular amplifier are typical products, measured in a narrow band test amplifier and specified as follows: VCE = 25 V - IC = 3.25 A - Th = 70 Table 2 Transistor type Batch no. Vision frequency Output power (peak sync) Intermod. product Gain 4 ADJUSTMENTS OF THE AMPLIFIER 17.7 W -55 dB 14.2 dB MD 8-16 no.7 224.25 MHz 18 W -55 dB 14.2 dB BLV33F MD 8-16 no. 10
The amplifier consists of two equal BLV33F branches (see Fig.1) and both transistors are separately biased at VCE = 25 V - IC = 3.25 A. The printed circuit board of the 2x BLV33F wideband amplifier is given in Fig.2 and schematic diagram + lay-out of the bias unit is given in Fig.3. Figure 9 at the end of the report shows the lay-out of the amplifier with 1998 Mar 23 3
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
Application Note ECO8005
the situation of the components. Each branch was adjusted for maximum and flat gain by means of a high power sweep with a frequency range from 170 - 230 MHz. The output of the amplifier was levelled at 40 W which means about 50% of the D.C. input power. After that, both branches are coupled by means of 3 dB -90 hybrids. 5 ASSEMBLING OF THE AMPLIFIER AND MECHANICAL DATA
Due to the dimensions of the printed circuit board (220 x 210 mm) 2 extruded blackened aluminium heat sinks (cat.no. 56293) are screwed on an aluminium plate (thickness 12 mm) which on its turn is screwed on the heat sink. Special attention has been paid to the surface finishing to keep the thermal resistance as low as possible. Dimensions of the amplifier: l = 224 mm - w = 223 mm - h = 113 mm. Weight: 7.5 kg. 6 MEASURED RESULTS
In Fig.4 the typical results of crossmodulation and 3-tone intermod. product (from 170 - 230 MHz) have been given for peak sync output powers of 30 W and 40 W. Figure 5 shows peak sync output power as function of 3-tone intermod. products (measured on channel 12: Vision freq. 224.25 MHz - Sound freq. 229.75 MHz). In Figs 6 and 7 the forward and reverse transducer gain as well as input and output voltage standing wave ratio are given. The measuring test set-up is depicted in Fig.8. Note: Signal levels 3-tone measurements: Vision carrier -8 dB; Sound carrier -7 dB; Sideband -16 dB; 0 dB corresponds to peak sync. Signals levels crossmodulation: Vision carrier switched from -20 dB to 0 dB; Sound carrier -7 dB; 0 dB = peak sync level Crossmodulation is defined as the voltage variation (%) of the sound carrier. 7 CONCLUSION
Two transistors BLV33F, coupled by means of 3 dB -90 hybrids, can deliver an output power (peak sync) of typ. 40 W for -52 dB 3-tone intermodulation. At 40 W output the crossmodulation varied from 15% to 18% in Band III (170 - 230 MHz). The gain of the amplifier is typically 13.3 + 0.3 dB. The required D.C. input is approx. 165 W. Using a high power sweep with adjustable transistor output levelling provides a suitable method to adjust a linear wideband power amplifier. 8 REFERENCES
Ref.1: G.L. Matthaei - Tables of Chebyshev Impedance Transforming Network of Low-Pass Filter Form. Proceedings of the IEEE August 1964, pp 939 - 963. Ref.2: A.H. Hilbers and M.J. Koppen - A wideband linear power amplifier (470 - 860 MHz) with two transistors BLW34. C.A.B. report ECO7901. Ref.3: R.F.F. Zwanen - A wideband Class-A linear power amplifier (170 - 230 MHz) with two transistors BLV33. C.A.B. report ECO7904.
1998 Mar 23
4
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1998 Mar 23
C3 C1 L1 C7 L4 C4 C8 R.F. input 50 in H1 iso -90 0
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
Vb R3 C13 C19
Vc
C25 C26 C27
L3
,,,, ,,,,,, ,,,, ,,,,,,
L11 C14 C21 C31 L7 L9 L13 L15 L17 L19 L21 BLV33F C11 C15 C22 C32
C35 R5 -90 H2 0 in iso R.F. output 50 R6
5
R1
R2 C5 C2 L2
C6
,,,, ,,,,,, ,,,, ,,,,,,
C9 C12 C16 C23 C34 L5 L8 L10 L14 L16 L18 L20 L22 BLV33F C10 C17 C24 C33 L12 L6 C28 C18 C29 R4 C20 C30 Vb Vc
MGP959
C36
Application Note ECO8005
Fig.1 2x BLV33F Band III Class A linear power amplifier.
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
Application Note ECO8005
handbook, full pagewidth
MGP986
Fig.2 Printed circuit board 2x BLV33F wideband power amplifier.
1998 Mar 23
6
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
Table 3 Parts list: BLV33F Band III Class A linear power amplifier (170 - 230 MHz) 10 pF 1.8 to 10 pF 220 pF 39 pF 68 pF 1000 pF 120 pF 300 nF 56 pF 10 F (40 V) 18 pF 100 10 3 dB -90 25 nH 90 nH chip capacitor film dielectric trimmer (cat. no. 222280905002) chip capacitor chip capacitor chip capacitor chip capacitor chip capacitor
Application Note ECO8005
C1 = C2 = C7 = C9 C3 = C6 = C32 = C34 C4 = C5 = C35 = C36 C8 = C10 C11 = C12 C13 = C18 = C27 = C28 C14 = C15 = C16 = C17 C19 = C20 = C26 = C29 C21 = C22 = C23 = C24 C25 = C30 C31 = C33 R1 = R2 = R5 = R6 R3 = R4 H1 = H2 L1 = L2 L3 = L6 L4 = L5 L7 = L8 L9 = L10 L11 = L12 L13 = L14 L15 = L16 L17 = L18 L19 = L20 L21 = L22
metallized film capacitor (cat. no. 222235225334) chip capacitor electrolytic capacitor (cat. no. 222212117109) chip capacitor (chip capacitors: ATC type 100B - C - MSX - 500) power metal film resistor PR52 type (cat. no. 232219231001) carbon resistor CR68 type coupler, model no. 10262 - 3, range 125 to 250 MHz, ANAREN MICROWAVE INC. 2 turns enamelled Cu wire (1 mm); int. diam. 5 mm; leads 2 x 3 mm 5 turns closely wound enamelled Cu wire (1.5 mm) int. diam. 6.5 mm; length 5 mm; leads 2 x 9 mm 60 stripline; w = 2 mm; length = 30 mm 30 stripline; w = 6 mm; length = 11 mm 40 stripline; w = 4 mm; length = 5 mm
20 nH
Cu strip (1 mm); length = 17 mm; h = 5 mm; w = 4 mm 30 stripline; w = 6 mm; length = 17 mm 30 stripline; w = 6 mm; length = 4 mm
28 nH
2 turns enamelled Cu wire (1.5 mm); int. diam. 6.5 mm; length 9 mm; leads 2 x 3 mm 30 stripline; w = 6 mm; length = 6 mm 50 stripline; w = 3 mm; length = 15 mm
The striplines are printed on double Cu-clad printed circuit board with epoxy fibre-glass dielectric (r = 4.5); thickness 1/16 inch.
1998 Mar 23
7
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
Table 4 R1 R2 R3 R4 R5 = R6 = R7 R8 = R9 R10 C1 = C3 C2 C4 D1 D2 T1 Parts list: Class A bias circuit for a single transistor BLV33F 150 100 10 1000 1.8 180 33 100 nF 100 pF 10 F carbon resistor CR25 type preset potentiometer CTP10 type carbon resistor CR25 type carbon resistor CR25 type rectangular wirewound resistor EH707 type carbon resistor CR25 type carbon resistor CR25 type metallized film capacitor ceramic capacitor electrolytic capacitor BZY 88 (3V3) BY 206 BD 136
Application Note ECO8005
1998 Mar 23
8
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
Application Note ECO8005
handbook, full pagewidth
Vs (+ 27 V) R5 R6 D2 R7 C4 R1 e b c Vc Vce = 25 V TR1 BD136
C1
C2
D1 R2 R3
C3
R8
R9
Vb
R4
R10
,,,,,, ,,,,,,
BLV33F
MGP983
handbook, full pagewidth
55
R5 C1 C2 R6 R7 Vs D2 72 R2 R1 D1 R3 R8 R9 R4 R10
MGP984
C4 C3 Vc e c b Vb
Fig.3 Class A bias circuit for a single transistor BLV33F.
1998 Mar 23
9
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
Application Note ECO8005
handbook, full pagewidth
20
MGP960
crossmod. (%) 16
40 W Po sync
12
8
30 W 0 dB -7 dB 0 dB = Po sync V (%)
4 -20 dB
0 168
175
182
189
196
203
210
217
f (MHz)
224
handbook, full pagewidth
-44
MGP961
intermod. product (dB) -48
intermod. product
-8 dB
-16 dB
-7 dB
0 dB = Po sync
-52
Po sync 40 W
-56 30 W
-60
-64 168
175
182
189
196
203
210
217
f (MHz)
224
2x BLV33F Class A linear power amplifier. VCE - 25 V - IC = 2 x 3.25 A - Tamb - 23 C - Th = 65 C.
Fig.4 Crossmodulation and intermodulation products of the 2x BLV33F wideband Band III linear power amplifier.
1998 Mar 23
10
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
Application Note ECO8005
handbook, full pagewidth
-45
MGP962
intermod. product (dB) -50
-55
-60 -8 dB -65 intermod. product 224.25 MHz -70 0 20 40 60 80 100 120 -16 dB
Po sync -7 dB
229.75 MHz
140 Po sync (W)
2x BLV33F Band III amplifier. VCE = 25 V; IC = 2 x 3.25 A; Tamb = 23 C; Th = 65 C.
Fig.5 3-tone intermodulation product as function of Po sync. Vision freq. 224 MHz; sound freq 229.5 MHz.
1998 Mar 23
11
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
Application Note ECO8005
handbook, halfpage
15
MGP963
(dB) 14
13
12
S21
150
170
190
210
230 (MHz)
250
a. Forward transducer gain.
MGP964
handbook, halfpage
(dB) 0 -10 -20 -30 -40 V.S.W.R. 2 1.5 1.2 1.1
S11
150
170
190
210
230 (MHz)
250
b. Input voltage standing wave ratio.
Fig.6 2x BLV33F wideband Band III power amplifier.
1998 Mar 23
12
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
Application Note ECO8005
handbook, halfpage
-20
MGP965
(dB)
-25
-30
-35 150
170
190
210
230 (MHz)
250
a. Reverse transducer gain.
MGP966
handbook, halfpage
(dB) 0 -10 -20 -30 -40 -50 150 170 190 210 230 (MHz) 250 V.S.W.R. 2 1.5 1.2 1.1
S22
b. Output voltage standing wave ratio.
Fig.7 2x BLV33F wideband power amplifier.
1998 Mar 23
13
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andbook, full pagewidth
1998 Mar 23
POWER DIVIDER BAND III WIDEBAND 50 POWER AMPLIFIER 50 D.U.T. 2x BLV33F HP778D DIRECT. COUPLER COAX SWITCH COAX SWITCH 6 dB
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
50
COAX SWITCH
8554L SPECTRUM ANALYZER
HP435A WATT METER
POWER DIVIDER 50 50 ATT. (100W) 10 dB HP778D DIRECT. COUPLER ATT. 6 dB
20 dB
ATT.
20 dB
ATT.
3 dB - 180 HYBRID
50
CD 50-4
ATT. 10 dB
ALC
VAR. ATT.
CIRCULATOR RANGES: 170 to 200 MHz 190 to 230 MHz BLV33 AMPLIFIER
VAR. ATT. 10 dB S.M.L.U. R.F. GEN.
14
SWOB III SWEEP S.M.L.U. SWEEP
COAX DETECTOR
50
50
50 VAR. ATT. BLV33 AMPLIFIER 10 dB S.M.L.U. R.F. GEN.
PM5171 ALC S.M.L.U. R.F. GEN.
20 dB D.C. AMPLIFIER
50
50
50
50
50
VAR. ATT. BLV33 AMPLIFIER 10 dB S.M.L.U. R.F. GEN.
BLV33 AMPLIFIER 50 50 50
Application Note ECO8005
POWER SWEEP TEST SET-UP
170 to 230 MHz 3-TONE TEST SET-UP
MGP985
Fig.8 Test set up 2x BLV33F Band III power amplifier.
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
Application Note ECO8005
Unfortunately the numbers in the lay-out of Fig.9 do not correspond with those of the schematic diagram of Fig.1. The reader is referred to the translation Table 5. Table 5 NUMBER IN LAY-OUT (see Fig.9) R1 R2 R3 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 L1 L3 L6 L9 NUMBER OF SCHEMATIC DIAGRAM (see Fig.1) R3 R5 R6 C1 C3 C4 C7 C8 C11 C14 C15 C19 C13 C21 C22 C25 C26 C27 C31 C32 C35 L1 L3 L11 L17
1998 Mar 23
15
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors BLV33F
Application Note ECO8005
handbook, full pagewidth
Vb
Vc
R1 C14 C10 C15 C11 C8 L3 C6 C7 C3 C9 C4 BLV33F C19 C13 C18 R2 R3
C16 L6 L9 C12
C17
C5 L1 C6 50 input IN HYBRID COUPLER
HYBRID COUPLER IN 50 output
MGP987
Vb
Vc
Fig.9 Lay-out of amplifier with situation of components.
1998 Mar 23
16
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
Date of release: 1998 Mar 23

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